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| MBR7xx, MBRF7xx & MBRB7xx Series Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifier Reverse Voltage 35 to 60V Forward Current 7.5A ITO-220AC (MBRF7xx) 0.405 (10.27) 0.383 (9.72) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08) TO-220AC (MBR7xx) 0.415 (10.54) MAX. 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) PIN 1 0.160 (4.06) 0.140 (3.56) 2 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) CASE 1 0.185 (4.70) 0.175 (4.44) DIA. 0.055 (1.39) 0.045 (1.14) 0.600 (15.5) 0.580 (14.5) 0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38) PIN 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.191 (4.85) 0.171 (4.35) 0.060 (1.52) PIN 1 PIN 2 0.110 (2.80) 0.100 (2.54) PIN 1 PIN 2 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.55) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) TO-263AB (MBRB7xx) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN K 0.055 (1.40) 0.047 (1.19) 1 K 2 0.624 (15.85) 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) PIN 1 PIN 2 K - HEATSINK 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout TO-263AB 0.42 (10.66) 0.360 (9.14) 0.320 (8.13) 0.33 (8.38) 0.63 (17.02) Dimensions in inches and (millimeters) 0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79) 0.08 (2.032) 0.24 (6.096) 0.095 (2.41) 0.12 (3.05) 0.205 (5.20) 0.195 (4.95) Features * Plastic package has Underwriters Laboratory Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 ounce, 2.24 grams www.vishay.com 1 Flammability Classifications 94V-0 * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * Guardring for overvoltage protection * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * High temperature soldering guaranteed: 250C/10 seconds, 0.25" (6.35mm) from case Document Number 88680 03-Mar-03 MBR7xx, MBRF7xx & MBRB7xx Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings Parameter (TC = 25C unless otherwise noted) Symbol VRRM VRWM VDC IF(AV) IFRM MBR735 MBR745 MBR750 MBR760 Unit V V V A A Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (SEE FIG. 1) Peak repetitive forward current (sq. wave, 20 KHz) at TC = 105C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse current at tp = 2.0s, 1KHZ Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH 30% 35 35 35 45 45 45 7.5 15 50 50 50 60 60 60 IFSM 150 A IRRM dv/dt TJ TSTG VISOL 1.0 10,000 -65 to +150 -65 to +175 4500 (NOTE 1) 3500 (NOTE 2) 1500 (NOTE 3) 0.5 A V/s C C V Electrical Characteristics (TC = 25C unless otherwise noted) Parameter Maximum instantaneous forward voltage at IF = 7.5A, at IF = 7.5A, at IF = 15A, at IF = 15A, Maximum reverse current at DC blocking voltage (Note 4) Symbol TC = TC = TC = TC = 25C 125C 25C 125C MBR735 MBR745 MBR750 MBR760 Unit VF - 0.57 0.84 0.72 0.1 15 0.75 0.65 - - 0.5 50 V TC = 25C TC = 125C IR mA Thermal Characteristics (TC = 25C unless otherwise noted) Parameter Thermal resistance from junction to case Symbol RJC MBR 3.0 MBRF 5.0 MBRB 3.0 Unit C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19") (4) Pulse test: 300s pulse width, 1% duty cycle Ordering Information Product MBR735 - MBR760 MBRF735 - MBRF760 MBRB735 - MBRB760 Case TO-220AC ITO-220AC TO-263AB Package Code 45 45 31 45 81 Package Option Anti-Static tube, 50/tube, 2K/carton Anti-Static tube, 50/tube, 2K/carton 13" reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13" reel, 800/reel, 4.8K/carton Document Number 88680 03-Mar-03 www.vishay.com 2 MBR7xx, MBRF7xx & MBRB7xx Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve 10 Resistive or Inductive Load 175 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) 150 125 100 75 50 25 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) 8 6 4 2 MBR735 - MBR745 MBR750 & MBR760 0 0 50 100 150 1 10 100 Case Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics 50 50 Fig. 4 - Typical Reverse Characteristics Instantaneous Reverse Current (mA) 10 MBR735 - MBR745 MBR750 & MBR760 Instantaneous Forward Current (A) 10 TJ = 125C 1 Pulse Width = 300s 1% Duty Cycle TJ = 25C 1 TJ = 125C 0.1 TJ = 75C 0.01 TJ = 25C 0.001 0 20 40 60 80 100 0.1 MBR735 - MBR745 MBR750 & MBR760 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 4,000 Fig. 6 - Typical Transient Thermal Impedance 100 1,000 Transient Thermal Impedance (CW) Junction Capacitance (pF) TJ = 25C f = 1.0MHZ Vsig = 50MVp-p 10 1 100 MBR735 - MBR745 MBR750 & MBR760 40 0.1 1 10 100 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) Document Number 88680 03-Mar-03 t, Pulse Duration (sec.) www.vishay.com 3 |
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